Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. (13th November 2017)

• Record Type: Journal Article
• Authors: Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu
• Is Part Of: Applied physics express. Volume 10:Number 12(2017)
• Publication Date: 2017-11-13
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.121004
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage ( V th ) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm 2 V −1 s −1 is achieved on [Mg] = 6.5 × 10 16 cm −3 layer with V th = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.