Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion. (11th April 2019)

• Record Type: Journal Article
• Authors: Chen, Jun; Yi, Wei; Kimura, Takashi; Takashima, Shinya; Edo, Masaharu; Sekiguchi, Takashi
• Is Part Of: Applied physics express. Volume 12:Number 5(2019)
• Publication Date: 2019-04-11
• Subjects: GaN -- Mg implantation -- Cathodoluminescence -- Dislocation; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab14cb
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Magnesium (Mg) ion implanted homoepitaxial GaN layers is investigated by cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS). The impact of dislocations on Mg diffusion is clarified by CL monitoring the Mg-related donor-acceptor pair (DAP) emission on novel angle cutting specimen. CL results suggest that: (1) there exist high concentration of nonradiative defects in a Mg implanted layer; and (2) Mg shows pipe diffusion along threading dislocations throughout epilayer to substrate. To achieve successful Mg doping by ion implantation, it is necessary to suppress the formation of a dead region in the Mg implanted layer and the pipe diffusion along threading dislocations.