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2. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps. (30th November 2020)

3. Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy. (15th February 2023)

4. Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells. (7th September 2021)

6. Measurement of the properties of GaN layers using terahertz time‐domain spectroscopic ellipsometry. Issue 8 (17th July 2017)