Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3. (23rd November 2020)

• Record Type: Journal Article
• Authors: Sugie, Ryuichi; Uchida, Tomoyuki; Hashimoto, Ai; Akahori, Seishi; Matsumura, Koji; Tanii, Yoshiharu
• Is Part Of: Applied physics express. Volume 13:Number 12(2020)
• Publication Date: 2020-11-23
• Subjects: cathodoluminescence -- point defects -- ion implantation -- anneal -- gallium oxide -- scanning capacitance microprobe -- carrier diffusion length; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abca7c
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Low-energy cross-sectional cathodoluminescence (CL) with a beam energy of 1 keV was applied to Si-ion-implanted β -Ga2 O3 (−201) wafers to investigate implantation damage and recovery. The semi-quantitative CL-intensity depth profiles were obtained by considering nonradiative recombination at the surface. We found that the CL intensity did not fully recover, even after annealing at 1273 K. Such insufficient recovery was prominent in the Si-diffusion region, suggesting that Si-dopant activation and Si diffusion are strongly correlated through interaction with point defects generated by implantation, such as Si interstitials and Ga vacancies.