1. A Framework to Segment Cellular Ultrastructure from 3D Electron Microscopy Images of Human Biopsies. (August 2022) Authors: Machireddy, Archana; Thibault, Guillaume; Bueno, Cecilia E.; Smith, Hannah R.; Riesterer, Jessica L.; Gray, Joe W.; Song, Xubo Journal: Microscopy and microanalysis Issue: Volume 28(2022)Supplement 1 Page Start: 1522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A multiscale adaptive mask method for rigid intraoperative ultrasound and preoperative CT image registration. Issue 10 (23rd September 2014) Authors: Zhang, Zhijun; Liu, Feng; Tsui, Hungtat; Lau, Yunwong; Song, Xubo Journal: Medical physics Issue: Volume 41:Issue 10(2014) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Coeffect of trapping behaviors on the performance of GaN-based devices *Project supported by the National Natural Science Foundation of China (Nos. 61604137, 61674130). (September 2018) Authors: Zhou, Xingye; Tan, Xin; Wang, Yuangang; Song, Xubo; Xu, Peng; Gu, Guodong; Lü, Yuanjie; Feng, Zhihong Journal: Journal of semiconductors Issue: Volume 39:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing. Issue 3 (22nd December 2019) Authors: Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Wang, Yuangang; Song, Xubo; Zhou, Xuanze; Xu, Guangwei; Liang, Shixiong; Feng, Zhihong; Cai, Shujun; Fu, Xingchang; Pu, Aimin; Liu, Ming Journal: Physica status solidi Issue: Volume 14:Issue 3(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors. Issue 3 (2nd January 2019) Authors: Gao, Xuedong; Yu, Cui; He, Zezhao; Song, Xubo; Liu, Qingbin; Zhou, Chuangjie; Guo, Jianchao; Cai, Shujun; Feng, Zhihong Journal: Nanoscale advances Issue: Volume 1:Issue 3(2019) Page Start: 1130 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*Project supported by the National Natural Science Foundation of China (No. 60890192). (July 2015) Authors: Tan, Xin; Lü, Yuanjie; Gu, Guodong; Wang, Li; Dun, Shaobo; Song, Xubo; Guo, Hongyu; Yin, Jiayun; Cai, Shujun; Feng, Zhihong Journal: Journal of semiconductors Issue: Volume 36:Number 7(2015:Jul.) Page Start: 5745 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate. (30th August 2020) Authors: He, Zezhao; Yu, Cui; Liu, Qingbin; Song, Xubo; Gao, Xuedong; Guo, Jianchao; Zhou, Chuangjie; Cai, Shujun; Feng, Zhihong Journal: Carbon Issue: Volume 164(2020) Page Start: 435 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High‐frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D‐band PA applications. Issue 15 (1st July 2016) Authors: Lv, Yuanjie; Song, Xubo; Guo, Hongyu; Fang, Yulong; Feng, Zhihong Journal: Electronics letters Issue: Volume 52:Issue 15(2016) Page Start: 1340 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency. Issue 5 (28th February 2018) Authors: Yu, Cui; He, Zezhao; Song, Xubo; Liu, Qingbin; Gao, Libo; Yao, Bing; Han, Tingting; Gao, Xuedong; Lv, Yuanjie; Feng, Zhihong; Cai, Shujun Journal: Physica status solidi Issue: Volume 12:Issue 5(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High‐frequency InAlN/GaN HFET with fmax over 400 GHz. Issue 12 (1st June 2018) Authors: Fu, Xing‐Chang; Lv, Yuanjie; Zhang, Li‐Jiang; Zhang, Tong; Li, Xian‐Jie; Song, Xubo; Zhang, Zhirong; Fang, Yulong; Feng, Zhihong Journal: Electronics letters Issue: Volume 54:Issue 12(2018) Page Start: 783 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗