High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*Project supported by the National Natural Science Foundation of China (No. 60890192). (July 2015)

• Record Type: Journal Article
• Authors: Tan, Xin; Lü, Yuanjie; Gu, Guodong; Wang, Li; Dun, Shaobo; Song, Xubo; Guo, Hongyu; Yin, Jiayun; Cai, Shujun; Feng, Zhihong
• Is Part Of: Journal of semiconductors. Volume 36:Number 7(2015:Jul.)
• Page Start: 5745
• Publication Date: 2015-07
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/7/074008
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>AlGaN/GaN high electron-mobility transistors (HEMTs) with 5 nm AlN passivation by plasma enhanced atomic layer deposition (PEALD) were fabricated, covered by 50 nm SiN_{<italic>x</italic>} which was grown by plasma enhanced chemical vapor deposition (PECVD). With PEALD AlN passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of AlN increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the AlN/SiN_{<italic>x</italic>} passivated devices were much smaller compared with the devices with SiN_{<italic>x</italic>} passivation, indicating that PEALD AlN passivation can improve the high temperature operation of the AlGaN/GaN HEMTs.</p> </abstract>