High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency. Issue 5 (28th February 2018)

• Record Type: Journal Article
• Authors: Yu, Cui; He, Zezhao; Song, Xubo; Liu, Qingbin; Gao, Libo; Yao, Bing; Han, Tingting; Gao, Xuedong; Lv, Yuanjie; Feng, Zhihong; Cai, Shujun
• Is Part Of: Physica status solidi. Volume 12:Issue 5(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-28
• Subjects: cut‐off frequency -- flexible electronics -- graphene -- transistors; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201700435
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Flexible graphene field effect transistors (GFETs) are fabricated on a polyimide (PI) substrate by an improved self‐aligned fabrication procedure. Short gate length of 50 nm is achieved. Ohmic contact resistance is depressed. The prepared GFET shows comparable intrinsic cut‐off frequency and maximum oscillation frequency of 116 and 110 GHz, respectively. The high frequency of flexible GFET demonstrated here paves the way for applications which require high flexibility and radio frequency operations. Abstract : Graphene has great application potential in the evolution of next generation flexible electronics. In this work, flexible graphene field effect transistors (GFETs) with very short gate‐length of 50 nm were fabricated on a polyimide (PI) substrate. The GFET demonstrates an extrinsic f T of 56 GHz, which is the highest extrinsic f T achieved in flexible GFETs reported to date.