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You searched for: Author/Creator Slipchenko, S.O.

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12. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics. (October 2021)

14. Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light. (September 2020)

20. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide. (February 2021)