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Author/Creator Slipchenko, S.O.

3. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021)

Authors:
Volkov, N.A.; Svetogorov, V.N.; Ryaboshtan, Yu.L.; Andreev, A.Yu.; Yarotskaya, I.V.; Ladugin, M.A.; Padalitsa, A.A.; Marmalyuk, A.A.; Slipchenko, S.O.; Lyutetskii, A.V.; Veselov, D.A.; Pikhtin, N.A.
Journal:
Quantum electronics
Issue:
Volume 51:Number 4(2021)
Page Start:
283
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

4. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm. (November 2020)

Authors:
Dudelev, V.V.; Mikhailov, D.A.; Babichev, A.V.; Savchenko, G.M.; Losev, S.N.; Kognovitskaya, E.A.; Lyutetskii, A.V.; Slipchenko, S.O.; Pikhtin, N.A.; Gladyshev, A.G.; Denisov, D.V.; Novikov, I.I.; Karachinsky, L.Ya.; Kuchinskii, V.I.; Egorov, A.Yu.; Sokolovskii, G.S.
Journal:
Quantum electronics
Issue:
Volume 50:Number 11(2020)
Page Start:
989
Record Type:
Journal Article
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6. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm. (March 2018)

Authors:
Marmalyuk, A.A.; Ryaboshtan, Yu.L.; Gorlachuk, P.V.; Ladugin, M.A.; Padalitsa, A.A.; Slipchenko, S.O.; Lyutetskiy, A.V.; Veselov, D.A.; Pikhtin, N.A.
Journal:
Quantum electronics
Issue:
Volume 48:Number 3(2018)
Page Start:
197
Record Type:
Journal Article
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8. High-coupling distributed feedback lasers for the 1.55 μm spectral region. (September 2019)

Authors:
Dudelev, V.V.; Mikhailov, D.A.; Chistyakov, D.V.; Kognovitskaya, E.A.; Lyutetskiy, A.V.; Slipchenko, S.O.; Pikhtin, N.A.; Gladyshev, A.G.; Denisov, D.V.; Voropaev, K.O.; Ionov, A.S.; Babichev, A.V.; Novikov, I.I.; Karachinskii, L.Ya.; Kuchinskii, V.I.; Egorov, A.Yu; Sokolovskii, G.S.
Journal:
Quantum electronics
Issue:
Volume 49:Number 9(2019)
Page Start:
801
Record Type:
Journal Article
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9. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm. (October 2021)

Authors:
Svetogorov, V.N.; Ryaboshtan, Yu.L.; Volkov, N.A.; Ladugin, M.A.; Padalitsa, A.A.; Marmalyuk, A.A.; Bakhvalov, K.V.; Veselov, D.A.; Lyutetskii, A.V.; Strelets, V.A.; Slipchenko, S.O.; Pikhtin, N.A.
Journal:
Quantum electronics
Issue:
Volume 51:Number 10(2021)
Page Start:
909
Record Type:
Journal Article
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10. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm. (October 2021)

Authors:
Bagaev, T.A.; Gul'tikov, N.V.; Ladugin, M.A.; Marmalyuk, A.A.; Kurnyavko, Yu.V.; Krichevskii, V.V.; Morozyuk, A.A.; Konyaev, V.P.; Simakov, V.A.; Slipchenko, S.O.; Podoskin, A.A.; Pikhtin, N.A.; Kazakova, A.E.; Romanovich, D.N.; Kryuchkov, V.A.
Journal:
Quantum electronics
Issue:
Volume 51:Number 10(2021)
Page Start:
912
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗