Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light. (September 2020)

• Record Type: Journal Article
• Authors: Batura, E.O.; Bobretsova, Yu.K.; Bogdanovich, M.V.; Veselov, D.A.; Grigor'ev, A.V.; Dudikov, V.N.; Kot, A.M.; Pikhtin, N.A.; Ryabtsev, A.G.; Ryabtsev, G.I.; Slipchenko, S.O.; Shpak, P.V.
• Is Part Of: Quantum electronics. Volume 50:Number 9(2020)
• Page Start: 822
• Page End: 825
• Publication Date: 2020-09
• Subjects: solid-state laser -- diode pumping -- semiconductor laser module -- passive Q switching -- pulse jitter; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17274
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: The temporal dynamics of diode-side-pumped Yb – Er laser, with a passive Co 2+ : MgAl2 O4 Q switch illuminated by a light beam (total fluence of 0.15 – 0.16 J cm −2 ) from a semiconductor pulsed module, is investigated. It is shown that, using this external illumination, one can change the lasing onset delay and the time jitter Δ T gi . The dependence of Δ T gi on the interval between the instant of switching the illumination module on and the lasing peak position t i has a minimum at | t i | ≈ 10 μs. The decrease in Δ T gi with a change in | t i | from 90 to 10 μs indicates that instant of lasing peak occurrence for the Yb – Er laser is partially controlled by the pulse from the highly stable semiconductor module. If | t i | < 10 μs, the enhanced luminescence fluence in the cavity of Yb – Er laser exceeds 0.16 J cm −2 ; the light beam from the module does not affect much the lasing process in the ytterbium – erbium laser; and, as a consequence, the time jitter recovers the initial value.