Optical absorption in a waveguide based on an n-type AlGaAs heterostructure. (November 2021)

• Record Type: Journal Article
• Authors: Bobretsova, Yu.K.; Veselov, D.A.; Klimov, A.A.; Bakhvalov, K.V.; Shamakhov, V.V.; Slipchenko, S.O.; Andryushkin, V.V.; Pikhtin, N.A.
• Is Part Of: Quantum electronics. Volume 51:Number 11(2021)
• Page Start: 987
• Page End: 991
• Publication Date: 2021-11
• Subjects: semiconductor laser -- semiconductor heterostructure -- optical absorption by free carriers -- absorption cross section; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17640
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: Free carrier absorption of optical radiation in layers of an AlGaAs/GaAs heterostructure is studied by the method of probe radiation coupling in order to determine the absorption cross section parameter in the AlGaAs material with a high (22%) aluminium concentration. For this purpose, we have fabricated special samples based on AlGaAs/GaAs heterostructures simulating an n-type-doped laser waveguide with carrier concentrations in the range 5 × 10 16 − 3 × 10 17 cm −3 . The doping profile and the composition and thickness of layers are measured and the temperature and spectral dependences of the absorption coefficient are studied. It is shown that an increase in temperature and in the probe wavelength leads to an increase in the absorption in the heterostructure layers.