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3. Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes. (1st May 2018)

4. Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition. Issue 3 (20th January 2020)