Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition. Issue 3 (20th January 2020)

• Record Type: Journal Article
• Authors: Akaiwa, Kazuaki; Ota, Katsuya; Sekiyama, Takahito; Abe, Tomoki; Shinohe, Takashi; Ichino, Kunio
• Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-20
• Subjects: corundum-structured phases -- electrical properties -- gallium oxide -- mist chemical vapor deposition; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900632
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Growth and electrical property of conductive Sn‐doped α‐Ga2 O3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α‐Ga2 O3 films on c‐plane sapphire, highly crystalline α‐Ga2 O3 films on m‐plane sapphire substrates are grown by applying two‐step growth procedure. Carrier concentration of Sn‐doped α‐Ga2 O3 films is controlled in the range of 10 17 –10 19 cm −3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga2 O3 films on m‐plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm 2 (V s) −1, which is much higher than previously reported value of 24 cm 2 (V s) −1 in the films grown on c‐plane sapphire. Abstract : Growth and electrical property of conductive Sn‐doped α‐Ga2 O3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. α‐Ga2 O3 films on m‐plane sapphires with the thickness of 2 μm show mobility as high as 65 cm 2 (V s) −1, which is much higher than previously reported value of 24 cm 2 (V s) −1 in the films grown on c‐plane sapphire.