Growth of Ga2O3 film on ScAlMgO4 substrate by mist-chemical vapor deposition. (1st June 2023)

• Record Type: Journal Article
• Authors: Yamashita, Syuhei; Moriya, Ryo; Takane, Hitoshi; Wada, Yuuichi; Yamafuji, Yuto; Kikawa, Junjiroh; Matsukura, Makoto; Kojima, Takahiro; Shinohe, Takashi; Kaneko, Kentaro; Araki, Tsutomu
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SF(2023)
• Publication Date: 2023-06-01
• Subjects: Ga2O3 -- semiconductor -- ScAlMgO4 -- mist CVD -- power device; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acbf5a
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: ScAlMgO4 (SAM) substrates have a trigonal structure with high cleavability in the c-plane. Because this substrate can be easily cleaved, gallium oxide (Ga2 O3 ) can be grown on the SAM substrate, and the difficulty in the heat dissipation of Ga2 O3 may be solved. Therefore, in this study, we performed Ga2 O3 growth on a SAM substrate using mist-chemical vapor deposition. When the growth temperature was varied at 500 °C, 600 °C, and 700 °C, ε -Ga2 O3 (004) grew dominantly, and the crystallinity improved with increasing temperature. Moreover, the grown ε -Ga2 O3 had orthorhombic structure and formed rotational domains. Furthermore, a phase transition to β -Ga2 O3 was achieved by annealing the resulting ε -Ga2 O3 on the SAM substrates. We also succeeded in separating the SAM substrates on which the Ga2 O3 thin films were grown.