1. A time-dependent Verilog-A compact model for MOS capacitors with interface traps. (25th February 2019) Authors: Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps. (20th February 2018) Authors: Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth. Issue 45 (7th November 2018) Authors: Shen, Xu-Qiang; Kojima, Kazutoshi; Shimizu, Mitsuaki; Okumura, Hajime Journal: CrystEngComm Issue: Volume 20:Issue 45(2018) Page Start: 7364 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy. (27th November 2020) Authors: Kokubo, Nobuhiko; Tsunooka, Yosuke; Inotsume, Sho; Fujie, Fumihiro; Onda, Shoichi; Yamada, Hisashi; Shimizu, Mitsuaki; Harada, Shunta; Tagawa, Miho; Ujihara, Toru Journal: Japanese journal of applied physics Issue: Volume 60:Number SA(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3. Issue 2 (11th September 2019) Authors: Yamada, Hisashi; Inotsume, Sho; Kumagai, Naoto; Yamada, Toshikazu; Shimizu, Mitsuaki Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 2(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Comparative Study of Boron Precursors for Chemical Vapor‐Phase Deposition‐Grown Hexagonal Boron Nitride Thin Films. Issue 3 (9th July 2020) Authors: Yamada, Hisashi; Inotsume, Sho; Kumagai, Naoto; Yamada, Toshikazu; Shimizu, Mitsuaki Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor. Journal: Physica status solidi Issue: Volume 218:Issue 3(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures. (10th July 2019) Authors: Takada, Noriharu; Taoka, Noriyuki; Ohta, Akio; Yamamoto, Taishi; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Shimizu, Mitsuaki; Miyazaki, Seiichi Journal: Japanese journal of applied physics Issue: Volume 58:Number SI(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates. Issue 8 (13th November 2017) Authors: Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki Other Names: Riechert Henning guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 8(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability. (18th December 2017) Authors: Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji Journal: Applied physics express Issue: Volume 11:Number 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. (13th November 2017) Authors: Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu Journal: Applied physics express Issue: Volume 10:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗