A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps. (20th February 2018)
- Record Type:
- Journal Article
- Title:
- A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps. (20th February 2018)
- Main Title:
- A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps
- Authors:
- Fukuda, Koichi
Asai, Hidehiro
Hattori, Junichi
Shimizu, Mitsuaki
Hashizume, Tamotsu - Abstract:
- Abstract: In this study, GaN MOS capacitance–voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance–voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.
- Is Part Of:
- Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
- Journal:
- Japanese journal of applied physics
- Issue:
- Volume 57:Number 4(2018)Supplement
- Issue Display:
- Volume 57, Issue 4 (2018)
- Year:
- 2018
- Volume:
- 57
- Issue:
- 4
- Issue Sort Value:
- 2018-0057-0004-0000
- Page Start:
- Page End:
- Publication Date:
- 2018-02-20
- Subjects:
- Physics -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1347-4065/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/JJAP.57.04FG04 ↗
- Languages:
- English
- ISSNs:
- 0021-4922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11415.xml