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Author/Creator Shahin, David I.

5. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs. (1st January 2016)

Authors:
Shahin, David I.; Anderson, Travis J.; Wheeler, Virginia D.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Eddy, Charles R.; Kub, Francis J.; Christou, Aris
Journal:
ECS journal of solid state science and technology
Issue:
Volume 5:Number 7(2016)
Page Start:
Q204
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

6. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs. (2nd June 2016)

Authors:
Shahin, David I.; Anderson, Travis J.; Wheeler, Virginia D.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Eddy, Charles R.; Kub, Francis J.; Christou, Aris
Journal:
ECS journal of solid state science and technology
Issue:
Volume 5:Number 7(2016)
Page Start:
Q204
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

7. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition. (28th June 2016)

Authors:
Anderson, Travis J.; Wheeler, Virginia D.; Shahin, David I.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Christou, Aris; Kub, Francis J.; Eddy, Charles R.
Journal:
Applied physics express
Issue:
Volume 9:Number 7(2016:Jul.)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗