Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs. (2nd June 2016)

• Record Type: Journal Article
• Authors: Shahin, David I.; Anderson, Travis J.; Wheeler, Virginia D.; Tadjer, Marko J.; Koehler, Andrew D.; Hobart, Karl D.; Eddy, Charles R.; Kub, Francis J.; Christou, Aris
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 7(2016)
• Page Start: Q204
• Page End: Q207
• Publication Date: 2016-06-02
• Subjects: Electrical Stressing -- GaN -- Gate Reliability -- HEMT -- High Temperature Gate -- Thermal Stability -- TiN -- Transition Metal Nitride; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0211607jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : TiN, a transition metal nitride, has been evaluated as an electrically and thermally stable Schottky gate material for AlGaN/GaN high electron mobility transistors. HEMTs with 75 nm TiN gates deposited via atomic layer deposition at 350°C exhibited improved static and dynamic on-state characteristics compared to Ni/Au-gated HEMTs. Reverse bias gate stressing indicated a higher critical voltage and higher breakdown voltage for the TiN-gated HEMTs. The TiN gated devices exhibited stable DC operation after annealing at temperatures as high as 800°C, while the Ni/Au gates exhibited significant degradation after annealing above 500°C and failed catastrophically at 800°C.