A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance. (1st January 2017)

• Record Type: Journal Article
• Authors: Tadjer, Marko J.; Anderson, Travis J.; Koehler, Andrew D.; Eddy, Charles R.; Shahin, David I.; Hobart, Karl D.; Kub, Fritz J.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 1(2017)
• Page Start: P58
• Page End: P61
• Publication Date: 2017-01-01
• Subjects: AlGaN/GaN -- Hall Effect -- high electron mobility transistor -- passivation -- PECVD -- Silicon Nitride; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0231701jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A tri-layer plasma enhanced CVD (PECVD) process for SiN deposition was developed to effectively passivate AlGaN/GaN high electron mobility transistors (HEMTs). A combination of thin, pre-gate SiN film deposited at high frequency (13.56 MHz) to minimize N-ion surface bombardment caused by low frequency ions, and a thick, post-gate bilayer SiN film designed to suppress on-state conductance degradation were demonstrated. By combining an annealed, 10.5 nm thick pre-gate SiN film with a bilayer post-gate SiN film, a trilayer PECVD SiN film with a total thickness of 122 nm was developed which maintained mobility, reduced on-resistance, improved drain-source current density, minimized degradation in dynamic on-state conductance upon off-state drain voltage stress, and minimized additional tensile stress.