Author/Creator: Sezaki, Hiroshi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Sezaki, Hiroshi

1. 500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC. (1st March 2022)

Authors:: Van Cuong, Vuong; Sato, Tadashi; Miyazaki, Takamichi; Meguro, Tatsuya; Ishikawa, Seiji; Maeda, Tomonori; Sezaki, Hiroshi; Kuroki, Shin-Ichiro
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number 3(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices. (1st January 2016)

Authors:: De Silva, Milantha; Maeda, Tomonori; Ishikawa, Seiji; Sezaki, Hiroshi; Miyazaki, Takamichi; Kikkawa, Takamaro; Kuroki, Shin-Ichiro
Journal:: ECS journal of solid state science and technology
Issue:: Volume 5:Number 9(2016)
Page Start:: P457
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices. (6th July 2016)

Authors:: De Silva, Milantha; Maeda, Tomonori; Ishikawa, Seiji; Sezaki, Hiroshi; Miyazaki, Takamichi; Kikkawa, Takamaro; Kuroki, Shin-Ichiro
Journal:: ECS journal of solid state science and technology
Issue:: Volume 5:Number 9(2016)
Page Start:: P457
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications. (25th November 2020)

Authors:: Van Cuong, Vuong; Ishikawa, Seiji; Maeda, Tomonori; Sezaki, Hiroshi; Meguro, Tetsuya; Kuroki, Shin-Ichiro
Journal:: Japanese journal of applied physics
Issue:: Volume 59:Number 12(2020)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC. (15th October 2019)

Authors:: Van Cuong, Vuong; Ishikawa, Seiji; Maeda, Tomonori; Sezaki, Hiroshi; Yasuno, Satoshi; Koganezawa, Tomoyuki; Miyazaki, Takamichi; Kuroki, Shin-Ichiro
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number 11(2019)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC. (January 2021)

Authors:: Muraoka, Kosuke; Ishikawa, Seiji; Sezaki, Hiroshi; Tomonori, Maeda; Yasuno, Satoshi; Koganezawa, Tomoyuki; Kuroki, Shin-Ichiro
Journal:: Materials science in semiconductor processing
Issue:: Volume 121(2021)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗