Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC. (January 2021)

• Record Type: Journal Article
• Authors: Muraoka, Kosuke; Ishikawa, Seiji; Sezaki, Hiroshi; Tomonori, Maeda; Yasuno, Satoshi; Koganezawa, Tomoyuki; Kuroki, Shin-Ichiro
• Is Part Of: Materials science in semiconductor processing. Volume 121(2021)
• Publication Date: 2021-01
• Subjects: Silicon carbide -- Barium -- Two-dimensional X-ray diffraction -- Hard X-ray photoelectron spectroscopy -- X-ray reflectivity; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105343
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We investigated the thickness dependencies of SiO2 /BaOx layers on the structural and interfacial properties of a layered gate dielectric on 4H-SiC. The deposition of the SiO2 layer on the BaOx layer changed the stoichiometry and distribution of Ba-silicate in the gate dielectric. Moreover, the interface trap density reduced with increasing SiO2 thickness. The crystal structure changed from amorphous to poly-crystalline with increasing BaOx thickness, indicating the existence of a critical thickness for crystallization. These results show that the properties of gate dielectric/SiC interfaces can be modified by varying the SiO2 /BaOx layer thickness. Highlights: The depositions of SiO2 /BaOx layers changed the stoichiometry, the crystal structure, and interface trap density.