High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications. (25th November 2020)

• Record Type: Journal Article
• Authors: Van Cuong, Vuong; Ishikawa, Seiji; Maeda, Tomonori; Sezaki, Hiroshi; Meguro, Tetsuya; Kuroki, Shin-Ichiro
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 12(2020)
• Publication Date: 2020-11-25
• Subjects: Ohmic contact -- Silicon carbide -- high temperature stability -- harsh environment -- amplifier -- 4H-SiC MOSFET; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abc924
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The high-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts was investigated at 400 °C in N2 ambient. The results showed that the single stage amplifier remained a stable voltage gain after 100 h of aging at 400 °C. Based on the transfer length method, the Ni/Nb/n-type 4H-SiC ohmic contact exhibited the excellent stability after being aged at 400 °C for 100 h. Whereas, the stability of electrical characteristics indicated that the 4H-SiC MOSFET also exhibited a good stability when operating in high temperature environment. Moreover, the stability of the electrical characteristics of the 4H-SiC MOS capacitor showed that the reliability of the Ni/Nb/4H-SiC ohmic contact played important role in reliability of SiC based devices. These results indicate that the fabrication process of the integrated circuits based on 4H-SiC devices with Ni/Nb ohmic contacts is promising to apply for high temperature as well as harsh environment applications.