Author/Creator: Sasaki, Kohei - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Sasaki, Kohei

1. A Simulation Study of the Radiation-Induced Bystander Effect: Modeling with Stochastically Defined Signal Reemission. (11th November 2012)

Authors:: Sasaki, Kohei; Wakui, Kosuke; Tsutsumi, Kaori; Itoh, Akio; Date, Hiroyuki
Other Names:: Marcu Loredana Academic Editor.
Journal:: Computational and mathematical methods in medicine
Issue:: Volume 2012(2012)
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Record Type:: Journal Article
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2. Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction. (2nd December 2021)

Authors:: Yao, Yongzhao; Sugawara, Yoshihiro; Yokoe, Daisaku; Hirano, Keiichi; Okada, Narihito; Tadatomo, Kazuyuki; Sasaki, Kohei; Kuramata, Akito; Ishikawa, Yukari
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number 12(2021)
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Record Type:: Journal Article
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3. Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography. (12th April 2019)

Authors:: Masuya, Satoshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Ueda, Osamu; Kasu, Makoto
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number 5(2019)
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Record Type:: Journal Article
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4. Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes. (1st June 2023)

Authors:: Sdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto
Journal:: Japanese journal of applied physics
Issue:: Volume 62:Number SF(2023)
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Record Type:: Journal Article
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5. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3. (28th July 2017)

Authors:: Kasu, Makoto; Oshima, Takayoshi; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu
Journal:: Japanese journal of applied physics
Issue:: Volume 56:Number 9(2017)
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Record Type:: Journal Article
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6. Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy. (22nd November 2017)

Authors:: Sasaki, Kohei; Thieu, Quang Tu; Wakimoto, Daiki; Koishikawa, Yuki; Kuramata, Akito; Yamakoshi, Shigenobu
Journal:: Applied physics express
Issue:: Volume 10:Number 12(2017)
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7. Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014). Issue 1 (January 2014)

Authors:: Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu
Journal:: Physica status solidi
Issue:: Volume 211:Issue 1(2014:Jan.)
Page Start:: n/a
Record Type:: Journal Article
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8. Development of gallium oxide power devices. Issue 1 (13th November 2013)

Authors:: Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu
Journal:: Physica status solidi
Issue:: Volume 211:Issue 1(2014:Jan.)
Page Start:: 21
Record Type:: Journal Article
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9. Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study. (21st July 2022)

Authors:: Shoji, Naoyuki; Sasaki, Kohei; Uedono, Akira; Taniguchi, Yuichi; Hayashi, Keiichi; Matsubara, Norie; Kobayashi, Tetsuya; Yamashita, Takefumi
Journal:: Polymer
Issue:: Volume 254(2022)
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Record Type:: Journal Article
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10. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects. (30th June 2017)

Authors:: Oshima, Takayoshi; Hashiguchi, Akihiro; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Oishi, Toshiyuki; Kasu, Makoto
Journal:: Japanese journal of applied physics
Issue:: Volume 56:Number 8(2017)
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Record Type:: Journal Article
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