Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy. (22nd November 2017)

• Record Type: Journal Article
• Authors: Sasaki, Kohei; Thieu, Quang Tu; Wakimoto, Daiki; Koishikawa, Yuki; Kuramata, Akito; Yamakoshi, Shigenobu
• Is Part Of: Applied physics express. Volume 10:Number 12(2017)
• Publication Date: 2017-11-22
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.124201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We developed depletion-mode vertical Ga2 O3 trench metal–oxide–semiconductor field-effect transistors by using n + contact and n − drift layers. These epilayers were grown on an n + (001) Ga2 O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 µm, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7 mΩ cm 2 and clear current modulation. An on–off ratio of approximately 10 3 was obtained.