1. A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates. (September 2019) Authors: Pedro, M.; Martin-Martinez, J.; Rodriguez, R.; Gonzalez, M.B.; Campabadal, F.; Nafria, M. Journal: Solid-state electronics Issue: Volume 159(2019) Page Start: 57 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging. (May 2022) Authors: Crespo-Yepes, A.; Nasarre, C.; Garsot, N.; Martin-Martinez, J.; Rodriguez, R.; Barajas, E.; Aragones, X.; Mateo, D.; Nafria, M. Journal: Solid-state electronics Issue: Volume 191(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs. (August 2022) Authors: Valdivieso, C.; Crespo-Yepes, A.; Miranda, R.; Bernal, D.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M. Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs. (May 2023) Authors: Valdivieso, C.; Crespo-Yepes, A.; Miranda, R.; Bernal, D.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M. Journal: Solid-state electronics Issue: Volume 203(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modeling of the degradation of CMOS inverters under pulsed stress conditions from 'on-the-fly' measurements. (October 2021) Authors: Crespo-Yepes, A.; Ramos, R.; Barajas, E.; Aragones, X.; Mateo, D.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M. Journal: Solid-state electronics Issue: Volume 184(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM. (January 2016) Authors: Maestro, M.; Diaz, J.; Crespo-Yepes, A.; Gonzalez, M.B.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Campabadal, F.; Aymerich, X. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 140 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. SPICE modeling of cycle-to-cycle variability in RRAM devices. (November 2021) Authors: Salvador, E.; Gonzalez, M.B.; Campabadal, F.; Martin-Martinez, J.; Rodriguez, R.; Miranda, E. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Unified RTN and BTI statistical compact modeling from a defect-centric perspective. (November 2021) Authors: Pedreira, G.; Martin-Martinez, J.; Saraza-Canflanca, P.; Castro-Lopez, R.; Rodriguez, R.; Roca, E.; Fernandez, F.V.; Nafria, M. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗