Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs. (May 2023)

• Record Type: Journal Article
• Authors: Valdivieso, C.; Crespo-Yepes, A.; Miranda, R.; Bernal, D.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.
• Is Part Of: Solid-state electronics. Volume 203(2023)
• Publication Date: 2023-05
• Subjects: Aging -- FD-SOI -- BTI -- HCI -- OFF-State -- Stress -- NW-FETs -- Reliability; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2023.108625
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID -VG curves of the transistor.