New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM. (January 2016)

• Record Type: Journal Article
• Authors: Maestro, M.; Diaz, J.; Crespo-Yepes, A.; Gonzalez, M.B.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Campabadal, F.; Aymerich, X.
• Is Part Of: Solid-state electronics. Volume 115 Part B(2016)
• Page Start: 140
• Page End: 145
• Publication Date: 2016-01
• Subjects: Resistive switching -- Random Telegraph Noise -- Resolution -- Time constants -- RRAM; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.08.010
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.