1. Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene. (November 2020) Authors: Schilirò, E.; Lo Nigro, R.; Panasci, S.E.; Gelardi, F.M.; Agnello, S.; Yakimova, R.; Roccaforte, F.; Giannazzo, F. Journal: Carbon Issue: Volume 169(2020) Page Start: 172 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Barrier height tuning in Ti/4H-SiC Schottky diodes. (December 2021) Authors: Bellocchi, G.; Vivona, M.; Bongiorno, C.; Badalà, P.; Bassi, A.; Rascuna', S.; Roccaforte, F. Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. (May 2019) Authors: Roccaforte, F.; Giannazzo, F.; Alberti, A.; Spera, M.; Cannas, M.; Cora, I.; Pécz, B.; Iucolano, F.; Greco, G. Journal: Materials science in semiconductor processing Issue: Volume 94(2019) Page Start: 164 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy. (February 2016) Authors: Giannazzo, F.; Fisichella, G.; Piazza, A.; Di Franco, S.; Oliveri, I.P.; Agnello, S.; Roccaforte, F. Journal: Materials science in semiconductor processing Issue: Volume 42:Part 2(2016:Feb.) Page Start: 174 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers. (April 2019) Authors: Spera, M.; Corso, D.; Di Franco, S.; Greco, G.; Severino, A.; Fiorenza, P.; Giannazzo, F.; Roccaforte, F. Journal: Materials science in semiconductor processing Issue: Volume 93(2019) Page Start: 274 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates. Issue 4 (28th October 2016) Authors: Schilirò, E.; Fiorenza, P.; Di Franco, S.; Bongiorno, C.; Saggio, M.; Roccaforte, F.; Lo Nigro, R. Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors. Issue 11 (15th September 2016) Authors: Giannazzo, F.; Fisichella, G.; Piazza, A.; Di Franco, S.; Greco, G.; Agnello, S.; Roccaforte, F. Journal: Physica status solidi Issue: Volume 10:Issue 11(2016) Page Start: 797 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Electrical Properties of Self-Assembled Nano-Schottky Diodes. (28th September 2008) Authors: Ruffino, F.; Canino, A.; Grimaldi, M. G.; Giannazzo, F.; Roccaforte, F.; Raineri, V. Other Names: Bai Xuedong Academic Editor. Journal: Journal of nanomaterials Issue: Volume 2008(2008) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Graphene integration with nitride semiconductors for high power and high frequency electronics. Issue 4 (17th October 2016) Authors: Giannazzo, F.; Fisichella, G.; Greco, G.; La Magna, A.; Roccaforte, F.; Pecz, B.; Yakimova, R.; Dagher, R.; Michon, A.; Cordier, Y. Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor. (April 2019) Authors: Prystawko, Pawel; Giannazzo, F.; Krysko, M.; Smalc-Koziorowska, J.; Schilirò, E.; Greco, G.; Roccaforte, F.; Leszczynski, M. Journal: Materials science in semiconductor processing Issue: Volume 93(2019) Page Start: 153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗