Author/Creator: Rafhay, Q. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Rafhay, Q.

1. Analytical relationship between subthreshold swing of thermionic and tunnelling currents. Issue 23 (1st November 2014)

Authors:: Hiblot, G.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
Journal:: Electronics letters
Issue:: Volume 50:Issue 23(2014)
Page Start:: 1745
Record Type:: Journal Article
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2. Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology. (May 2015)

Authors:: Hiblot, G.; Lacord, J.; Akbal, M.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 107(2015)
Page Start:: 1
Record Type:: Journal Article
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3. Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials. (September 2015)

Authors:: Hiblot, G.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 111(2015)
Page Start:: 188
Record Type:: Journal Article
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4. Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials. (September 2015)

Authors:: Hiblot, G.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 111(2015)
Page Start:: 188
Record Type:: Journal Article
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5. New Y-function based MOSFET parameter extraction method from weak to strong inversion range. (September 2016)

Authors:: Henry, J.B.; Rafhay, Q.; Cros, A.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 84
Record Type:: Journal Article
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6. New Y-function based MOSFET parameter extraction method from weak to strong inversion range. (September 2016)

Authors:: Henry, J.B.; Rafhay, Q.; Cros, A.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 84
Record Type:: Journal Article
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7. Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology. (15th June 2021)

Authors:: Boyer, F.; Dabertrand, K.; Gergaud, P.; Grégoire, M.; Rafhay, Q.; Rodriguez, Ph.
Journal:: Materials science in semiconductor processing
Issue:: Volume 128(2021)
Page Start:
Record Type:: Journal Article
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