Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials. (September 2015)

• Record Type: Journal Article
• Authors: Hiblot, G.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
• Is Part Of: Solid-state electronics. Volume 111(2015)
• Page Start: 188
• Page End: 195
• Publication Date: 2015-09
• Subjects: Nanowire -- Double gate -- Compact modeling -- Subthreshold swing -- Density-Gradient -- III–V; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.06.008
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A subthreshold swing model is presented for DG and NW MOSFETs. An effective oxide thickness is used to improve the model accuracy. This model is valid for both silicon and III–V materials. Abstract: In this work, an analytical model for the subthreshold swing of double gate and cylindrical nanowire MOSFETs is proposed. Using the Voltage Doping Transform, it is shown that a one-dimensional potential model is sufficient to obtain a high accuracy, provided that an effective oxide thickness is used. The validity of this model is then confirmed with TCAD simulations. Finally, the impact of quantum effects is discussed. Based on Density-Gradient simulations of Si and GaAs MOSFETs, it is shown that the model is still valid when quantum effects are accounted for.