Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology. (May 2015)

• Record Type: Journal Article
• Authors: Hiblot, G.; Lacord, J.; Akbal, M.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.
• Is Part Of: Solid-state electronics. Volume 107(2015)
• Page Start: 1
• Page End: 7
• Publication Date: 2015-05
• Subjects: SOI -- VDT -- Compact modeling -- MASTAR -- Short-channel effects -- III–V; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.02.001
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A model for short-channels effects in FDSOI MOSFET is presented. Fringing fields and dependence on substrate bias are included. The model is validated against simulations and experimental data. The impact of the BOX on short-channel effects is discussed. Abstract: In this work, a compact model for short-channel effects is proposed for fully depleted silicon-on-insulator (FDSOI) MOSFETs, which takes into account the impact of body-bias and fringing fields, developed to be suitable for both thin and thick buried oxide (BOX) devices. The model is derived using the Voltage-Doping Transform, confirmed with TCAD simulations and experimental data from the literature. The impact of the BOX thickness on the subthreshold swing and the contribution of the leakiest path position to the DIBL are finally discussed.