New Y-function based MOSFET parameter extraction method from weak to strong inversion range. (September 2016)

• Record Type: Journal Article
• Authors: Henry, J.B.; Rafhay, Q.; Cros, A.; Ghibaudo, G.
• Is Part Of: Solid-state electronics. Volume 123(2016)
• Page Start: 84
• Page End: 88
• Publication Date: 2016-09
• Subjects: Parameter extraction -- MOSFET -- Low gate voltage; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.06.004
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: New Y -function based MOSFET parameter extraction method. Explicit expression of drain current versus Y function. MOSFET parameter extraction from weak to strong inversion range. Robust MOSFET parameter extraction possible for low gate voltage overdrive. Abstract: A new Y -function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Yc (= Qi √ C gc )-function and Y (= Id /√ gm )-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail.