1. A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement. (August 2016) Authors: Prajoon, P.; Nirmal, D.; Anuja Menokey, M.; Charles Pravin, J. Journal: Superlattices and microstructures Issue: Volume 96(2016) Page Start: 155 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement. (August 2016) Authors: Prajoon, P.; Nirmal, D.; Anuja Menokey, M.; Charles Pravin, J. Journal: Superlattices and microstructures Issue: Volume 96(2016) Page Start: 155 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application. (January 2018) Authors: Nirmal, D.; Arivazhagan, L.; Fletcher, A.S.Augustine; Ajayan, J.; Prajoon, P. Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 810 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor. (April 2017) Authors: Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J. Journal: Superlattices and microstructures Issue: Volume 104(2017) Page Start: 470 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier. (April 2018) Authors: Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D. Journal: Superlattices and microstructures Issue: Volume 116(2018) Page Start: 71 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications. Issue 3 (4th May 2021) Authors: Ajayan, J.; Ravichandran, T.; Mohankumar, P.; Prajoon, P.; Charles Pravin, J.; Nirmal, D. Journal: IETE journal of research Issue: Volume 67:Issue 3(2021) Page Start: 366 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Issue 12 (December 2015) Authors: Jebalin, Binola K.; Shobha Rekh, A.; Prajoon, P.; Kumar, N.Mohan; Nirmal, D. Journal: Microelectronics journal Issue: Volume 46:Issue 12 Part B (2015) Page Start: 1387 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications. (February 2015) Authors: Jebalin, Binola K.; Shobha Rekh, A.; Prajoon, P.; Godwinraj, D.; Mohan Kumar, N.; Nirmal, D. Journal: Superlattices and microstructures Issue: Volume 78(2015) Page Start: 210 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗