The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Issue 12 (December 2015)

• Record Type: Journal Article
• Authors: Jebalin, Binola K.; Shobha Rekh, A.; Prajoon, P.; Kumar, N.Mohan; Nirmal, D.
• Is Part Of: Microelectronics journal. Volume 46:Issue 12 Part B (2015)
• Page Start: 1387
• Page End: 1391
• Publication Date: 2015-12
• Subjects: HEMT -- Breakdown voltage -- AlGaN -- GaN -- High-k -- Relative permittivity -- Passivation -- Schottky contact; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2015.04.006
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this work, analysis and optimization of different high-k material in the passivation layer is carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron Mobility Transistor (HEMT). The enhancement in Off-state breakdown voltage is observed for different high-k dielectric in the passivation layer. The device with L gd of 1.5 µm and with high-k passivation layer provides a higher Off-state breakdown voltage. A maximum of 380 V is obtained as the Off-state breakdown for high-k (~HfO2 ) passivation layer and the obtained result is validated using experimental data. The improved drain current and transconductance for the device obtained is 0.51 A/mm and 143 mS/mm respectively. These results show that the Schottky Source Drain contact (SSD) high-k passivated AlGaN/GaN device is suitable for high power application.