1. Analog performance of GaN/AlGaN high-electron-mobility transistors. (September 2021) Authors: de Oliveira Bergamim, Luis Felipe; Parvais, Bertrand; Simoen, Eddy; Caño de Andrade, Maria Glória Journal: Solid-state electronics Issue: Volume 183(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications. (November 2021) Authors: Gupta, Sumreti; Rathi, Aarti; Parvais, Bertrand; Dixit, Abhisek Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. (September 2021) Authors: Glória Caño de Andrade, Maria; Felipe de Oliveira Bergamim, Luis; Baptista Júnior, Braz; Roberto Nogueira, Carlos; Alex da Silva, Fábio; Takakura, Kenichiro; Parvais, Bertrand; Simoen, Eddy Journal: Solid-state electronics Issue: Volume 183(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗