Analog performance of GaN/AlGaN high-electron-mobility transistors. (September 2021)

• Record Type: Journal Article
• Authors: de Oliveira Bergamim, Luis Felipe; Parvais, Bertrand; Simoen, Eddy; Caño de Andrade, Maria Glória
• Is Part Of: Solid-state electronics. Volume 183(2021)
• Publication Date: 2021-09
• Subjects: HEMT -- Analog performance -- GaN/AlGaN -- High temperature; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108048
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: Comparative analog performance of AlGaN/GaN HEMTs on silicon. Reduce in analog parameters due Fermi potential change. HEMTs are very attractive candidates for 5G applications. Larger the channel length (L), greater efficiency is obtained. Early voltage and intrinsic voltage gain increase is observed for longer channels. Abstract: In this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the output conductance are experimentally investigated under saturation operation. Moreover, important figures of merit for the analog performance, such as transconductance-over-drain current, Early voltage and intrinsic voltage gain are analyzed for different channel lengths in the temperature range of 25 °C till 200 °C. The results indicate that due to change in the Fermi potential, the analog parameters reduce with increasing T. Furthermore, the performance increase for longer channel devices is correlated directly with the lower drain electric field penetration.