Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. (September 2021)

• Record Type: Journal Article
• Authors: Glória Caño de Andrade, Maria; Felipe de Oliveira Bergamim, Luis; Baptista Júnior, Braz; Roberto Nogueira, Carlos; Alex da Silva, Fábio; Takakura, Kenichiro; Parvais, Bertrand; Simoen, Eddy
• Is Part Of: Solid-state electronics. Volume 183(2021)
• Publication Date: 2021-09
• Subjects: HEMT -- Low-frequency noise -- GaN/AlGaN -- High-temperature; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108050
• Languages: English
• ISSNs: 0038-1101

Abstract

Graphical abstract: Highlights: HEMTs on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. The Low frequency noise were performed on AlGaN/GaN HEMTs at different temperatures. The Low frequency noise were performed on AlGaN/GaN HEMTs at different temperatures. There are GR centers in the proximity of the GaN channel of the AlGaN/GaN HEMTs. Abstract: In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).