Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications. (November 2021)

• Record Type: Journal Article
• Authors: Gupta, Sumreti; Rathi, Aarti; Parvais, Bertrand; Dixit, Abhisek
• Is Part Of: Solid-state electronics. Volume 185(2021)
• Publication Date: 2021-11
• Subjects: FINFET -- Cryogenic -- BSIM-CMG -- Compact models; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108089
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Wafer-level DC-IV measurements on bulk FinFETs down to 4 K. Model to hardware correlation using BSIM-CMG compact model at room temperature. Extension of extracted model to cryogenic temperatures. There is scope for improvement in the BSIMCMG model at cryogenic temperatures. Abstract: CMOS circuits for Quantum Computing applications require FETs operating at cryogenic temperatures. In this work, we aim to present one of the first insights on the ability of the industry standard compact model BSIMCMG in capturing low temperature device physics. We have performed wafer-level DC-IV measurements on multi-fin n- channel bulk FinFETs with 3–4 nm wide fins and down to 20 nm designed gate length across a range of temperatures spanning from 393 K down to 4 K. Our initial results show that while our model to hardware correlation at room temperature is acceptable, at cryogenic temperatures the model may need improvement, especially in the saturation region of the device operation.