1. Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3. (11th May 2017) Authors: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Okamoto, Naoya; Kaneki, Shota; Nishiguchi, Kenya; Hara, Naoki; Hashizume, Tamotsu Journal: Applied physics express Issue: Volume 10:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Evaluation of a relapse‐prevention program for methamphetamine‐dependent inmates using a self‐teaching workbook and group therapy. Issue 1 (19th September 2013) Authors: Matsumoto, Toshihiko; Imamura, Fumi; Kobayashi, Ohji; Wada, Kiyoshi; Ozaki, Shiro; Takeuchi, Yoshio; Hasegawa, Masahiko; Imamura, Yoko; Taniya, Yuko; Adachi, Yasumori Journal: Psychiatry and clinical neurosciences Issue: Volume 68:Issue 1(2014) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021) Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji Journal: Applied physics express Issue: Volume 14:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process. (1st March 2022) Authors: Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Sato, Masaru; Ozaki, Shiro; Yamada, Atsushi; Kotani, Junji Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Issue 4 (20th February 2023) Authors: Kotani, Junji; Makiyama, Kozo; Ohki, Toshihiro; Ozaki, Shiro; Okamoto, Naoya; Minoura, Yuichi; Sato, Masaru; Nakamura, Norikazu; Miyamoto, Yasuyuki Journal: Electronics letters Issue: Volume 59:Issue 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Improved fT/fmax in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility transistors. (1st April 2022) Authors: Ozaki, Shiro; Kumazaki, Yusuke; Okamoto, Naoya; Hara, Naoki; Ohki, Toshihiro Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates. (29th December 2020) Authors: Kumazaki, Yusuke; Ohki, Toshihiro; Kotani, Junji; Ozaki, Shiro; Niida, Yoshitaka; Minoura, Yuichi; Nishimori, Masato; Okamoto, Naoya; Sato, Masaru; Nakamura, Norikazu; Watanabe, Keiji Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. Issue 5 (29th December 2014) Authors: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Masuda, Satoshi; Joshin, Kazukiyo Journal: Physica status solidi Issue: Volume 212:Issue 5(2015:May) Page Start: 1153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Issue 7 (3rd February 2022) Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji Journal: Physica status solidi Issue: Volume 219:Issue 7(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. Issue 5 (20th December 2015) Authors: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Joshin, Kazukiyo Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1259 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗