1. "Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration. (1st April 2022) Authors: Kumabe, Takeru; Watanabe, Hirotaka; Ando, Yuto; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth. (28th May 2019) Authors: Liu, Qiang; Fujimoto, Naoki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system. Issue 8 (28th June 2017) Authors: Nagamatsu, Kentaro; Nitta, Shugo; Ye, Zheng; Nagao, Hirofumi; Miki, Shinichi; Honda, Yoshio; Amano, Hiroshi Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. (28th May 2019) Authors: Fukushima, Hayata; Usami, Shigeyoshi; Ogura, Masaya; Ando, Yuto; Tanaka, Atsushi; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN. (20th January 2022) Authors: Itoh, Yuta; Watanabe, Hirotaka; Ando, Yuto; Kano, Emi; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Tanaka, Atsushi; Ikarashi, Nobuyuki; Amano, Hiroshi Journal: Applied physics express Issue: Volume 15:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes. Issue 8 (24th February 2017) Authors: Usami, Shigeyoshi; Miyagoshi, Ryosuke; Tanaka, Atsushi; Nagamatsu, Kentaro; Kushimoto, Maki; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. (13th January 2021) Authors: Kumabe, Takeru; Ando, Yuto; Watanabe, Hirotaka; Deki, Manato; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Experimental demonstration of GaN IMPATT diode at X-band. (3rd March 2021) Authors: Kawasaki, Seiya; Ando, Yuto; Deki, Manato; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Arai, Manabu; Amano, Hiroshi Journal: Applied physics express Issue: Volume 14:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching. (24th February 2021) Authors: Yamada, Takehiro; Ando, Yuto; Watanabe, Hirotaka; Furusawa, Yuta; Tanaka, Atsushi; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Suda, Jun; Amano, Hiroshi Journal: Applied physics express Issue: Volume 14:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017). Issue 8 (14th August 2017) Authors: Tanaka, Atsushi; Barry, Ousmane1; Nagamatsu, Kentaro; Matsushita, Junya; Deki, Manato; Ando, Yuto; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗