Experimental demonstration of GaN IMPATT diode at X-band. (3rd March 2021)

• Record Type: Journal Article
• Authors: Kawasaki, Seiya; Ando, Yuto; Deki, Manato; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Arai, Manabu; Amano, Hiroshi
• Is Part Of: Applied physics express. Volume 14:Number 4(2021)
• Publication Date: 2021-03-03
• Subjects: gallium nitride (GaN) -- IMPATT diode -- microwave oscillation; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abe3dc
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p + –n simple abrupt junction and vertical mesa termination. The reverse I – V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.