1. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Issue 9 (August 2015) Authors: Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Issue 9 (August 2015) Authors: Autran, J.L.; Munteanu, D.; Moindjie, S.; Saoud, T. Saad; Sauze, S.; Gasiot, G.; Roche, P. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1506 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons. (November 2021) Authors: Munteanu, D.; Moindjie, S.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon. (November 2021) Authors: Autran, J.L.; Munteanu, D. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Functional behaviour of TiO2 films doped with noble metals. (2nd August 2016) Authors: Rodrigues, M. S.; Borges, J.; Gabor, C.; Munteanu, D.; Apreutesei, M.; Steyer, P.; Lopes, C.; Pedrosa, P.; Alves, E.; Barradas, N. P.; Cunha, L.; Martínez-Martínez, D.; Vaz, F. Journal: Surface engineering Issue: Volume 32:Number 8(2016) Page Start: 554 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Modelling and simulation of SEU in bulk Si and Ge SRAM. (September 2019) Authors: Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. (September 2017) Authors: Moindjie, S.; Autran, J.L.; Munteanu, D.; Gasiot, G.; Roche, P. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Natural radiation events in CCD imagers at ground level. (September 2016) Authors: Saad Saoud, T.; Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 68 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Natural radiation events in CCD imagers at ground level. (September 2016) Authors: Saad Saoud, T.; Moindjie, S.; Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 68 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Radiation and COTS at ground level. Issue 9 (August 2015) Authors: Autran, J.L.; Munteanu, D. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 2147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗