Radiation and COTS at ground level. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Autran, J.L.; Munteanu, D.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 2147
• Page End: 2153
• Publication Date: 2015-08
• Subjects: Single event effects (SEE) -- Radiation effects -- CMOS technologies -- Components Off the Shelf (COTS) -- Terrestrial cosmic rays -- Neutrons -- Muons -- Protons -- Accelerated tests -- Real-time tests -- Modeling and simulation -- CMOS bulk -- FD-SOI -- FinFET; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.030
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This tutorial surveys single event effects (SEE) induced by terrestrial cosmic rays on current commercial CMOS technologies. After describing the natural radiation environment at ground and atmospheric levels, the tutorial describes the physics of SEEs, from the main mechanisms of interaction between atmospheric radiation (neutrons, protons, muons) and circuit materials to the electrical response of transistors, cells and complete circuits. SEE characterization using accelerated and real-time tests is examined, as well as modeling and numerical simulation issues. Special emphasis finally concerns the radiation response of advanced technologies, including deca-nanometer bulk, FD-SOI and FinFET families. Highlights: This tutorial surveys single event effects (SEE) in CMOS technologies. The physics of SEEs induced by natural radiation at terrestrial level is summarized. SEE characterization, modeling and simulation issues are briefly discussed. Special emphasis concerns deca-nanometer bulk, FD-SOI and FinFET technologies.