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1. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. Issue 6 (10th March 2022)

2. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. (23rd September 2022)

6. P-type silicon as hole supplier for nitride-based UVC LEDs. (28th February 2019)