Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. Issue 6 (10th March 2022)

• Record Type: Journal Article
• Authors: Reddy, Pramod; Mecouch, Will; Hayden Breckenridge, M.; Khachariya, Dolar; Bagheri, Pegah; Hyun Kim, Ji; Guan, Yan; Mita, Seiji; Moody, Baxter; Tweedie, James; Pavlidis, Spyridon; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko
• Is Part Of: Physica status solidi. Volume 16:Issue 6(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-03-10
• Subjects: AlGaN -- APD -- UVC; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202100619
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN substrates high ultraviolet‐C sensitivity for λ < 200 nm are fabricated, while exhibiting blindness to λ > 250 nm. A maximum quantum efficiency of 68% and peak gain of 320 000 are estimated resulting in a figure of merit of ≈220 000 in devices with ϕ = 100 μm. As expected, a decrease in gain with increase in device size is observed and a gain of ≈20 000 is estimated in devices with ϕ = 400 μm. Overall, two orders of magnitude higher performance are observed in APDs on single crystal AlN substrates compared to those on sapphire. Abstract : Herein, Al‐rich AlGaN‐based avalanche photodiodes grown on single crystal AlN substrates are demonstrated, exhibiting solar blindness and high ultraviolet‐C sensitivity for λ < 200 nm operating at <150 V. A maximum quantum efficiency of 68% and peak gain of 320 000 are achieved resulting in a figure of merit of ≈220 000 in devices with ϕ = 100 μm.