(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates. (17th August 2017)

• Record Type: Journal Article
• Authors: Dalmau, Rafael; Craft, Hughes Spalding; Schlesser, Raoul; Mita, Seiji; Smart, Joseph; Hitchcock, Collin; Pandey, Gyanesh; Chow, Tat-Sing Paul; Moody, Baxter
• Is Part Of: ECS transactions. Volume 80:Number 7(2017)
• Page Start: 217
• Page End: 226
• Publication Date: 2017-08-17
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08007.0217ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to 500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a ~10 6 current rectification ratio, a 7 MV/cm peak field at blocking, and a 1.45 MW/cm 2 unipolar figure of merit. Challenges for this emerging technology, including doping limitations and compensation in AlGaN alloys, Ohmic contacts, and device termination are discussed.