(Invited) X-Ray Metrology of AlN Single Crystal Substrates. (3rd July 2019)

• Record Type: Journal Article
• Authors: Dalmau, Rafael; Britt, Jeffrey; Moody, Baxter; Schlesser, Raoul
• Is Part Of: ECS transactions. Volume 92:Number 7(2019)
• Page Start: 113
• Page End: 121
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09207.0113ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : X-ray based techniques were used to characterize AlN single crystal substrates at different stages of production, providing essential information about substrate orientation, surface finish, structural perfection, and heteroepitaxy. X-ray topographs acquired on a commercial diffractometer confirmed that iterative diameter expansion of AlN boules, without the introduction of low angle grain boundaries, was successfully achieved. As a result, high-quality, macrodefect-free, 2-inch AlN substrates were demonstrated.