1. A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns. Issue 1 (March 2021) Authors: Shubina, K Yu; Mokhov, D V; Berezovskaya, T N; Nikitina, E V; Mizerov, A M Journal: Journal of physics Issue: Volume 1851:Issue 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Creation of effective sources of white radiation based on GaP(As, N) on silicon substrates. Issue 1 (1st March 2022) Authors: Lazarenko, A A; Nikitina, E V; Pirogov, E V; Gudovskikh, A S; Baranov, A I; Mizerov, A M; Sobolev, M S Journal: Journal of physics Issue: Volume 2227:Issue 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Monolith GaAsP/Si dual-junction solar cells grown by MBE. (December 2019) Authors: Sobolev, M S; Ilkiv, I V; Lazarenko, A A; Mizerov, A M; Nikitina, E V; Pirogov, E V; Timoshnev, S N; Baranov, A I; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. On the stress relaxation mechanism of GaN thin films grown on Si(111) substrates. (December 2019) Authors: Koryakin, A A; Mizerov, A M; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Raman analysis of epitaxial GaN layers grown on Si (111) by PA MBE. (December 2020) Authors: Lubyankina, E A; Toporov, V V; Mizerov, A M; Timoshnev, S N; Shubina, K Yu; Bairamov, B H; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology' : Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. (17th June 2019) Authors: Seredin, P V; Goloshchapov, D L; Zolotukhin, D S; Len'shin, A S; Mizerov, A M; Arsent'ev, I N; Leiste, H; Rinke, M Journal: Quantum electronics Issue: Volume 49:Number 6(2019) Page Start: 545 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE. (December 2019) Authors: Shubina, K Yu; Mizerov, A M; Timoshnev, S N; Mokhov, D V; Nikitina, E V; Kim, I; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns. (December 2020) Authors: Shubina, K Yu; Mokhov, D V; Berezovskaya, T N; Nikitina, E V; Mizerov, A M; Bouravleuv, A D Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗