On the stress relaxation mechanism of GaN thin films grown on Si(111) substrates. (December 2019)

• Record Type: Journal Article
• Authors: Koryakin, A A; Mizerov, A M; Bouravleuv, A D
• Is Part Of: Journal of physics. Volume 1410(2019)
• Publication Date: 2019-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1410/1/012046
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Gallium nitride (GaN) thin films grown on Si(111) substrates via plasma-assisted molecular beam epitaxy were investigated. The morphology of GaN films was studied by scanning electron microscopy. It was found that GaN films at nanoscale contain a large amount of cavities. The Raman measurements of GaN/Si(111) system were performed and showed that the position of the GaN E2 (TO) band is close to that of unstrained GaN. We proposed a stress relaxation mechanism to explain the low stress state of GaN films.