Monolith GaAsP/Si dual-junction solar cells grown by MBE. (December 2019)

• Record Type: Journal Article
• Authors: Sobolev, M S; Ilkiv, I V; Lazarenko, A A; Mizerov, A M; Nikitina, E V; Pirogov, E V; Timoshnev, S N; Baranov, A I; Bouravleuv, A D
• Is Part Of: Journal of physics. Volume 1410(2019)
• Publication Date: 2019-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1410/1/012040
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The growth of monolith GaAsP/Si dual-junction solar cells on Si substrates by molecular-beam epitaxy is demonstrated. The technological method for the formation of a highly doped tunnel p + /n + junction was developed. An obvious increase in the value of the open-circuit voltage indicating the contribution of the top-junction in the total open-circuit voltage monolithic dual-junction solar cells was found.